A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

This present article interprets the analytical models of central channel potential, threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve 2D Poisson’s determining potential. minimum potential is obtained by expression, it utilized determine voltage using Drift-Diffusion method. behaviour GD-JL-GAA MOSFETs examined varying physical device parameters such as doping concentration (NDn), thickness (tsi), oxide (tox), length ratio (L1: L2). mathematical analysis shows that nominal gate leakage in due high graded abrupt junction inside region. model results have verified simulation data extracted from a TCAD simulator.